BRD4N70

BRD4N70

產品介紹:描述 / Descriptions TO-252 塑封封裝 N 溝道 MOS 場效應管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低柵電荷,低反饋電容,開關速度快。 Low gate charge, low crss, fast switching. 用途 / Applic

產品詳細

描述 / Descriptions
TO-252 塑封封裝 N 溝道 MOS 場效應管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
特征 / Features
低柵電荷,低反饋電容,開關速度快。 Low gate charge, low crss, fast switching.
用途 / Applications
該器件適用于適配器和充電器的功率開關電路 These devices are well suited for power switch circuit of adaptor and charger.
內部等效電路 / Equivalent Circuit

極限參數 / Absolute Maximum Ratings(Ta=25℃)
參數 Parameter 符號 Symbol 數值 Rating 單位 Unit Drain-Source Voltage VDS 700 V Drain Current ID(Tc=25℃) 4.0 A Drain Current ID(Tc=100℃) 3.2 A Drain Current - Pulsed IDM ① 16 A Gate-Source Voltage VGS ±30 V Single Pulsed Avalanche Energy EAS ② 150 mJ Power Dissipation PD 70 W Junction Temperature Range Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ Junction-to-Case RθJC 1.79 /W ℃ Junction-to-Ambient RθJA 62.5 /W


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